| PART |
Description |
Maker |
| M67776H |
RF POWER MODULE 896-941MHz, 7.2V, 5.0W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
| M67760HC 67760HC |
RF POWER MODULE 896-941MHz, 12.5V, 20W, FM MOBILE RADIO
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M67706U |
896-941MHz /7.5V /4W /FM PORTABLE RADIO
896-941MHz,7.5V,4W,FM PORTABLE RADIO
896-941MHZ, 7.5V, 4W, FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RD05MMP110 |
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
|
Mitsubishi Electric Semiconductor
|
| SM08790-45LDL |
869-896 MHz 30 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| DS55-0004 DS55-0004-TB DS55-0004-TR |
Low Cost Five-Way GMIC SMT Power Divider 824-896 MHz
|
M/A-COM Technology Solutions, Inc.
|
| TSL2014 |
896 x 1 linear sensor array. Operation to 5 MHz. Single 5V supply.
|
TAOS
|
| BSM101AR C67076-S1018-A2 BSM101 |
From old datasheet system
SIMOPAC Module (Power module Single switch N channel Enhancement mode) SIMOPAC模块（单开关电源模块N通道增强模式
SIMOPAC Module (Power module Single switch N channel Enhancement mode) 200 A, 50 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| WS128K32N-35H1M WS128K32N-35H1C WS128K32N-17H1C WS |
35ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
15ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
55ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
20ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
45ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????5ns锛?
128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????0ns锛?
x32 SRAM Module X32号的SRAM模块
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时7ns
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时0ns
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时5ns
17ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
|
NXP Semiconductors N.V.
White Electronic Designs Corporation
|
| BSM50GD120DN2 C67076-A2514-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块（功率模相全桥包括快速滑行二极管
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
